Investigation of Hot Carrier Injection Effects in Recessed-Gate GaN MIS-HEMTs by TCAD Simulations
This study focuses on the advantages of recessed gate GaN High Electron Mobility Transistors (MIS-HEMTs) and the reliability issues. GaN MIS-HEMTs have been widely applied in high-power and high-frequency fields. However, the Hot Carrier Injection (HCI) Effect has a significant impact on their reliability, manifesting as threshold voltage shift and increased leakage current, thereby limiting their widespread commercial deployment. We conducted simulation analysis to investigate the effects of different trap energy levels and densities on device performance, revealing the important influence of the HCI effect on the transport characteristics of GaN MIS-HEMTs. The findings provide a theoretical basis for improving the reliability of GaN MIS-HEMTs and advancing their commercialization.
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